Operation voltage dependence of memory cell characteristics in fully depleted floating-body cell

A one-transistor memory cell on silicon-on-insulator, called floating-body cell (FBC), has been developed and demonstrated. Threshold voltage difference between the "0"-state and the "1"-state, which is a key parameter for realizing a large-scale memory by FBCs, is measured and a...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2005-10, Vol.52 (10), p.2220-2226
Main Authors: Shino, T., Ohsawa, T., Higashi, T., Fujita, K., Kusunoki, N., Minami, Y., Morikado, M., Nakajima, H., Inoh, K., Hamamoto, T., Nitayama, A.
Format: Article
Language:English
Subjects:
Applied sciences
Arrays
Channels
Current distribution
Design. Technologies. Operation analysis. Testing
Devices
Distribution
Electric potential
Electronics
Exact sciences and technology
Impurities
Integrated circuits
Integrated circuits by function (including memories and processors)
Magnetic and optical mass memories
Monitors
MOS memory integrated circuits
MOSFETs
Random access memories
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon on insulator technology
silicon-on-insulator (SOI) technology
Storage and reproduction of information
Threshold voltage
Transistors
Voltage
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Summary:A one-transistor memory cell on silicon-on-insulator, called floating-body cell (FBC), has been developed and demonstrated. Threshold voltage difference between the "0"-state and the "1"-state, which is a key parameter for realizing a large-scale memory by FBCs, is measured and analyzed using a 96 kb array diagnostic monitor (ADM). A function test of the ADM yielded a fail-bit probability of 0.002%. A new metric relating to the fail-bit probability, that is, the ratio of the threshold voltage difference over the total threshold voltage variation, is introduced and applied to the measurement results. Read current distributions are also evaluated for various operation voltages. This paper also investigates substrate bias dependence of the threshold voltage unique to fully-depleted devices. Channel impurity and substrate impurity concentration dependence of the threshold voltage are analyzed based on experimental data and device simulation.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2005.856808