Thermal evolution of chemical oxides and (100) silicon at 300DGC in ambient air as seen by attenuated total reflection infrared spectroscopy

In this work, a soft thermal treatment at 300DGC in ambient air was performed to study, step-by-step, the evolution of silicon surface both after RCA and HF wet processes. From attenuated total reflection and contact angle measurements it can be concluded that even the use of low temperature oxidati...

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Bibliographic Details
Published in:Journal of the Electrochemical Society 2003-07, Vol.150 (6), p.G333-G338
Main Authors: Tardif, K, Chabli, A, Danel, A, Rochat, N, Veillerot, M
Format: Article
Language:English
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Summary:In this work, a soft thermal treatment at 300DGC in ambient air was performed to study, step-by-step, the evolution of silicon surface both after RCA and HF wet processes. From attenuated total reflection and contact angle measurements it can be concluded that even the use of low temperature oxidation does not able a single chemical termination to be obtained at the same time on an initially oxide-free water surface. Infrared analysis reveals that, for the same amount of SiO2, the chemical oxides appear about twice thicker as seen by ellipsometry than thermal oxides even grown at very low temperature: 300DGC. The presence of hydrogen in the wet oxides confirm this non ideality of chemical oxides. Annealing the chemical oxides at 300DGC in air leads to a partial reorganization of the chemical oxides without any change in the silanol group content.
ISSN:0013-4651