Substrate coupling in a high-gain 30-Gb/s SiGe amplifier-modeling, suppression, and measurement

For demonstrating substrate coupling in high-gain broadband amplifiers, a limiting differential transimpedance amplifier has been developed and fabricated in a SiGe bipolar technology. It operates up to 30 Gb/s and stands out for a maximum (nonlinear) transimpedance in the limiting mode of 25 k/spl...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 2005-10, Vol.40 (10), p.2035-2045
Main Authors: Steiner, W., Rein, H.-M., Berntgen, J.
Format: Article
Language:English
Subjects:
Amplification
Amplifiers
Applied sciences
Bonding
Broadband amplifiers
Circuit properties
Circuit testing
Constraining
Coupling circuits
Design. Technologies. Operation analysis. Testing
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Gain
Germanium silicon alloys
high-speed bipolar circuits
Integrated circuits
Joining
noise suppression
Optical amplifiers
Optical receivers
Optimization
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor optical amplifiers
Silicon germanides
Silicon germanium
Stands
Substrate coupling
Substrates
Testing, measurement, noise and reliability
transimpedance amplifiers
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Summary:For demonstrating substrate coupling in high-gain broadband amplifiers, a limiting differential transimpedance amplifier has been developed and fabricated in a SiGe bipolar technology. It operates up to 30 Gb/s and stands out for a maximum (nonlinear) transimpedance in the limiting mode of 25 k/spl Omega/, resulting in a gain /spl times/ speed product as high as 750 k/spl Omega//spl middot/Gb/s. This record value could be achieved by applying several techniques for suppression of noise coupling simultaneously. The effectiveness of each technique was verified experimentally by measuring the output eye diagrams of different mounted amplifier versions. The high accuracy potential of the substrate modeling tools applied for optimizing the amplifier design has been demonstrated separately by measurements on special (mounted) test structures up to 40 GHz. These investigations also showed the strong degradation of shielding measures by bond inductances with increasing frequency.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2005.852825