Parameterized SPICE model for a phase-change RAM device

A simple form of a SPICE macro model for a generic phase-change random access memory device is presented. The approach is based upon lumped parameter multiple level models. The SPICE implementation is described using a series of increasingly complex modeling blocks for dc to transient analysis. The...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2006-01, Vol.53 (1), p.112-118
Main Authors: Cobley, R.A., Wright, C.D.
Format: Article
Language:English
Subjects:
Amorphous semiconductors
Applied sciences
circuit modeling
Computer simulation
Design. Technologies. Operation analysis. Testing
Devices
Electronics
Exact sciences and technology
Integrated circuit modeling
Integrated circuits
Integrated circuits by function (including memories and processors)
Mathematical models
memories
phase-change random access memory (PC-RAM)
Programming
Random access memories
Random access memory
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SPICE
Spices
Switching
Transient analysis
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Summary:A simple form of a SPICE macro model for a generic phase-change random access memory device is presented. The approach is based upon lumped parameter multiple level models. The SPICE implementation is described using a series of increasingly complex modeling blocks for dc to transient analysis. The effect of nonlinear phase switching during the programming cycle is demonstrated in a SPICE simulation and compared to experimental data.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2005.860642