Performance evaluation of field-enhanced P-channel split-gate flash memory

A p-channel split-gate Flash memory cell, employing a field-enhanced structure, is investigated in this letter. A cell with a sharp poly-tip structure is utilized to enhance the electric field, while using Fowler-Nordheim tunneling through the interpoly oxide. The cell demonstrated an erase voltage...

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Bibliographic Details
Published in:IEEE electron device letters 2005-09, Vol.26 (9), p.670-672
Main Authors: Wen-Ting Chu, Hao-Hsiung Lin, Yu-Hsiung Wang, Chia-Ta Hsieh, Yung-Tao Lin, Wang, C.S.
Format: Article
Language:English
Subjects:
Acceptability
Applied sciences
Channel hot electron injection
CMOS technology
Design. Technologies. Operation analysis. Testing
Electric potential
Electronics
Energy consumption
Exact sciences and technology
Field-enhanced structure
Flash memory
Flash memory (computers)
Hot electrons
Impact ionization
Integrated circuits
Integrated circuits by function (including memories and processors)
Low voltage
Magnetic and optical mass memories
Nonvolatile memory
Oxides
p-channel
Programming
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon compounds
Split gate flash memory cells
split-gate
Storage and reproduction of information
Tunneling
Voltage
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Summary:A p-channel split-gate Flash memory cell, employing a field-enhanced structure, is investigated in this letter. A cell with a sharp poly-tip structure is utilized to enhance the electric field, while using Fowler-Nordheim tunneling through the interpoly oxide. The cell demonstrated an erase voltage as low as 12 V. In cell programming, both channel-hot-hole impact ionization induced channel-hot-electrons (CHE) and band-to-band tunneling induced hot electrons (BBHE) are evaluated. BBHE shows an injection efficiency of /spl sim/2 orders in magnitude higher than that of CHE. The cell also demonstrated an acceptable program disturb window, which is of high concern in a p-channel stacked-gate cell. Both programming approaches can pass 300 k program/erase cycles.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2005.853633