Composition determination of Si/Si1−xGex/Si by photoreflectance spectroscopy

UHVCVD-grown Si/Si1−xGex/Si heterostructure is investigated by photoreflectance spectroscopy (PR). The principle of PR in determining Ge content of a Si1−xGex epilayer is thoroughly described. The unambiguous E1 transition energy in the Si1−xGex epilayer is very useful to determine Ge content during...

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Bibliographic Details
Published in:Metals and materials international 2004-10, Vol.10 (5), p.489-492
Main Authors: Chen, Changchun, Kelly, P. V., Liu, Zhihong, Huang, Wentao, Dou, Weizhi, Tsien, Pei-Hsin
Format: Article
Language:English
Subjects:
Germanium
Heterostructures
Silicon germanides
Spectroscopy
Spectrum analysis
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Summary:UHVCVD-grown Si/Si1−xGex/Si heterostructure is investigated by photoreflectance spectroscopy (PR). The principle of PR in determining Ge content of a Si1−xGex epilayer is thoroughly described. The unambiguous E1 transition energy in the Si1−xGex epilayer is very useful to determine Ge content during PR analysis. R&R study with 10 repeats at the same point indicates that the measurements of PR are reproducible. These results demonstrate that PR is very promising for analysis of Si1−xGex epilayer characterization with constant Ge content.
ISSN:1598-9623
2005-4149
DOI:10.1007/BF03027354