Characterization of PLZT thin film prepared by photochemical deposition using photosensitive metal-organic precursors

• Published in: Microelectronic engineering 2004-02, Vol.71 (2), p.215-220
• Main Authors: Park, Hyeong-Ho, Kim, Woo Sik, Yang, Jun-Kyu, Park, Hyung-Ho, Hill, Ross H.
• Format: Article
• Language: English
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Materials; Microelectronic fabrication (materials and surfaces technology); Photochemical reaction; PLZT; PZT; Self-patterning; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; UV exposure
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2003.11.004

The electrical properties of lanthanum doped lead zirconate titanate (PLZT) thin films prepared by photochemical metal-organic deposition (PMOD) using photosensitive starting precursors have been characterized. PLZT films with various La concentration were prepared by PMOD on Si(1 0 0) for observing the image of self-patterned PLZT film or on Pt(1 1 1)/Ti/SiO 2/Si(1 0 0) for ferroelectric properties measurement. Even though PLZT film with 0 mol% of La, strictly PZT, showed an asymmetric behavior in polarization-voltage ( P– E) relation, PLZT film by doping La showed symmetric behavior in P– E relation. The amelioration of electric and ferroelectric properties with increased substitution of La in PLZT film was observed, especially with 3 mol% La doped PLZT film, the most characteristic P– E hysteresis loop in the point of imprint property was obtained with comparatively large remnant polarization, 30 μC/cm 2 at 15 V. Also, capacitance and leakage current behavior of PLZT film were revealed to be sensitive to the contents of La.