Correlation between series resistance and parameters of Al/n-Si and Al/p-Si Schottky barrier diodes

The aim of this work is to experimentally investigate the effect of series resistance on the non-ideal silicon Schottky diode (SSD), in our process fabrication. Two types of diodes, with high resistivity silicon bulk, Al/n-Si and Al/p-Si have been prepared. The parameter RS, the ideality factor n an...

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Bibliographic Details
Published in:Applied surface science 2004-09, Vol.236 (1-4), p.366-376
Main Authors: Siad, M, Keffous, A, Mamma, S, Belkacem, Y, Menari, H
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Ohmic contact
Physics
Schottky barrier
Series resistance
Silicon
α-Spectrometry
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Summary:The aim of this work is to experimentally investigate the effect of series resistance on the non-ideal silicon Schottky diode (SSD), in our process fabrication. Two types of diodes, with high resistivity silicon bulk, Al/n-Si and Al/p-Si have been prepared. The parameter RS, the ideality factor n and the barrier height φB0 are determined by performing different plots from the experimental forward bias current–voltage (I–V) and reverse bias capacitance–voltage (C–V) measurement. The high resistivity Schottky diode is currently used in nuclear detection, we tested these junctions in α particle spectrometry and measured their energy resolution.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2004.05.009