Effect of P + ions on the microstructure and the nature of the formed silicides in the Cr/Si system

The effect of the phosphorus on the microstructure and on the nature of the formed silicide in the annealed Cr/Si system is studied. The chromium layer is deposited by electron gun evaporation on the undoped and P + doped monocrystalline silicon. Cross-sectional transmission electron microscopy (XTE...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2004-12, Vol.114, p.246-250
Main Authors: Mirouh, K., Bouabellou, A., Halimi, R., Karaali, A., Mosser, A., Ehret, G.
Format: Article
Language:English
Subjects:
Cr 3Si
Cr/Si system
P + ions
Stacking faults
TEM
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Summary:The effect of the phosphorus on the microstructure and on the nature of the formed silicide in the annealed Cr/Si system is studied. The chromium layer is deposited by electron gun evaporation on the undoped and P + doped monocrystalline silicon. Cross-sectional transmission electron microscopy (XTEM) investigation of the samples, annealed at 475 °C for different times, shows that the presence of phosphorus leads to the formation of CrSi 2 disilicide, free of defects, and Cr 3Si silicide for lower and higher annealing times, respectively. In the case of undoped substrate the formed CrSi 2 disilicide is stable and contains a high concentration of stacking faults when the chromium is partially consumed.
ISSN:0921-5107
1873-4944
DOI:10.1016/j.mseb.2004.07.030