CROSS-SECTIONAL ANALYSIS OF CuInS2 THIN FILM PREPARED FROM ELECTROPLATED PRECURSOR

Thin CuInS2 films were prepared by sulfurization of Cu/In bi-layers. The precursor layer was firstly electroplated onto the treated surface of Mo-coated glass. The observation of the cross- section prepared by focused ion beam (FIB) etching revealed that the void-free film was initially formed on th...

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Bibliographic Details
Published in:Jpn.J.Appl.Phys ,Part 2. Vol. 43, no. 1A/B, pp. L108-L110. 2004 Part 2. Vol. 43, no. 1A/B, pp. L108-L110. 2004, 2004-01, Vol.43 (1A/B), p.L108-L110
Main Authors: Onuma, Y, Takeuchi, K, Ichikawa, S, Suzuki, Y, Fukasawa, R, Matono, D, Nakamura, K
Format: Article
Language:English
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Summary:Thin CuInS2 films were prepared by sulfurization of Cu/In bi-layers. The precursor layer was firstly electroplated onto the treated surface of Mo-coated glass. The observation of the cross- section prepared by focused ion beam (FIB) etching revealed that the void-free film was initially formed on the top surface of the precursor and subsequently continued to grow until the advancing front of the film reached the Mo layer. Then followed the nucleation of voids near the bottom of the CuInS2 film. Prolonged sulfurization caused the voids to increase in size. Thin film solar cells were fabricated using the CuInS2 film as an optical absorber layer. Optimization of a sulfurization period is important in order to improve the cell efficiency. 8 refs.
ISSN:0021-4922
DOI:10.1143/JJAP.43.L108