Electrical properties of amorphous high-κ HfTaTiO gate dielectric with dielectric constants of 40-60

High-quality Hf-based gate dielectrics with dielectric constants of 40-60 have been demonstrated. Laminated stacks of Hf, Ta, and Ti with a thickness of similar to 10 Aa each was deposited on Si followed by rapid thermal anneal. X-ray diffraction analysis showed that the crystallization temperature...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2005-05, Vol.26 (5), p.298-300
Main Authors: LU, N, LI, H.-J, GARDNER, M, WICKRAMANAYAKA, S, KWONG, D.-L
Format: Article
Language:English
Subjects:
Applied sciences
Density
Dielectric constant
Dielectric properties
Electrical properties
Electrodes
Electronics
Exact sciences and technology
Gates
Hafnium
Materials
Stacks
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:High-quality Hf-based gate dielectrics with dielectric constants of 40-60 have been demonstrated. Laminated stacks of Hf, Ta, and Ti with a thickness of similar to 10 Aa each was deposited on Si followed by rapid thermal anneal. X-ray diffraction analysis showed that the crystallization temperature of the laminated dielectric stack is increased up to 900 degree C. The excellent electrical properties of HfTaTiO dielectrics with TaN electrode have been demonstrated, including low interface state density (D sub(it)), leakage current, and trap density. The effect of binary and ternary laminated metals on the enhancement of dielectric constant and electrical properties has been studied.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2005.846893