Contribution of numerical simulation to silicon carbide bulk growth and epitaxy

High temperature epitaxial processes for SiC bulk and thin films by physical vapour transport and chemical vapour deposition are reviewed from an academic point of view using heat and mass transfer modelling and simulation. The objective is to show that this modelling approach could provide informat...

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Bibliographic Details
Published in:Journal of physics. Condensed matter 2004-05, Vol.16 (17), p.S1579-S1595
Main Authors: Meziere, Jérôme, Pons, Michel, Cioccio, Léa Di, Blanquet, Elisabeth, Ferret, Pierre, Dedulle, Jean-Marc, Baillet, Francis, Pernot, Etienne, Anikin, Michaïl, Madar, Roland, Billon, Thierry
Format: Article
Language:English
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Summary:High temperature epitaxial processes for SiC bulk and thin films by physical vapour transport and chemical vapour deposition are reviewed from an academic point of view using heat and mass transfer modelling and simulation. The objective is to show that this modelling approach could provide information on fabrication and characterization for the improvement of the knowledge of the growth history. Recent results of our integrated research programme on SiC, taking into account the fabrication, process modelling and characterization, will be presented. (Application: wide band gap microelectronics.)
ISSN:0953-8984
1361-648X
DOI:10.1088/0953-8984/16/17/009