Disorder effects on ferromagnetism in diluted, magnetic semiconductors

We discuss a model for diluted magnetic semiconductors (DMS) appropriate for low charge carrier density and local moment concentrations in III–V DMS such as Ga 1− x Mn x As. In our model, carriers arise from the Mn impurity band and are exchange-coupled to the magnetic ions. We have studied this mod...

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Bibliographic Details
Published in:Journal of magnetism and magnetic materials 2004-05, Vol.272, p.1993-1994
Main Authors: Kennett, M.P, Berciu, M, Bhatt, R.N
Format: Article
Language:English
Subjects:
Disorder
DMS
Ferromagnetism
Spintronics
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Summary:We discuss a model for diluted magnetic semiconductors (DMS) appropriate for low charge carrier density and local moment concentrations in III–V DMS such as Ga 1− x Mn x As. In our model, carriers arise from the Mn impurity band and are exchange-coupled to the magnetic ions. We have studied this model using mean-field and Monte Carlo techniques. We find that disorder in the Mn ion locations can lead to spatially inhomogeneous local magnetizations below the Curie temperature that are strongly correlated with the local carrier charge density. This motivates a phenomenological two component model that provides an adequate description of thermodynamic properties.
ISSN:0304-8853
DOI:10.1016/j.jmmm.2003.12.788