Direct wafer bonded abrupt junction tunnel diodes

Abrupt junction tunnel diodes have been fabricated using hydrophobic direct wafer bonding to join together highly n- and p-type doped wafers. Low reverse resistance backward diodes were achieved. The reverse bias behavior of the diodes is purely ohmic with a total reverse resistance of 0.0015 Omega...

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Bibliographic Details
Published in:Journal of the Electrochemical Society 2004, Vol.151 (6), p.G387-G390
Main Authors: ESSER, R. H, HOBART, K. D, KUB, F. J
Format: Article
Language:English
Subjects:
Applied sciences
Diodes
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Abrupt junction tunnel diodes have been fabricated using hydrophobic direct wafer bonding to join together highly n- and p-type doped wafers. Low reverse resistance backward diodes were achieved. The reverse bias behavior of the diodes is purely ohmic with a total reverse resistance of 0.0015 Omega cm2, which produces a reverse voltage of 150 mV at 100 A/cm2. Although Esaki tunneling is observed under forward bias, there is no observed negative differential resistance due to high excess current. The current work is the first step in creating low-loss stacked diode structures for high blocking voltage electric power applications.
ISSN:0013-4651
1945-7111
DOI:10.1149/1.1731558