Local current distribution and electrical properties of a magnetic tunnel junction using conducting atomic force microscopy

Local topographical and electrical properties were simultaneously measured for a magnetic tunnel junction formed by Ta (50 /spl Aring/)/Ni-Fe (20 /spl Aring/)/Cu (50 /spl Aring/)/Mn/sub 75/ Ir/sub 25/ (100 /spl Aring/)/Co/sub 70/Fe/sub 30/(40 /spl Aring/)/Al-O (8-15 /spl Aring/)/Co/sub 70/Fe/sub 30/...

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Bibliographic Details
Published in:IEEE transactions on magnetics 2005-02, Vol.41 (2), p.887-891
Main Authors: Canizo-Cabrera, A., Li, S.C., Min-Fong Shu, Jia-Mou Lee, Garcia-Vazquez, V., Chen, C.C., Wu, J.C., Takahashi, M., Te-Ho Wu
Format: Article
Language:English
Subjects:
Atomic force microscopy
Atomic measurements
Conductive atomic force microscopy (CAFM)
Cross-disciplinary physics: materials science
rheology
Current distribution
dielectric tunnel capacitance
Electric variables measurement
Electrical properties
Exact sciences and technology
Image contrast
Iron
local electric transport
Magnetic analysis
Magnetic force microscopy
Magnetic properties
magnetic tunnel junction
Magnetic tunneling
Magnetism
magnetoresistance ratio
Materials science
Mathematical analysis
Nickel
Other topics in materials science
Physics
ramping effect
Tantalum
Testing
Tunnel junctions
Volt-ampere characteristics
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Summary:Local topographical and electrical properties were simultaneously measured for a magnetic tunnel junction formed by Ta (50 /spl Aring/)/Ni-Fe (20 /spl Aring/)/Cu (50 /spl Aring/)/Mn/sub 75/ Ir/sub 25/ (100 /spl Aring/)/Co/sub 70/Fe/sub 30/(40 /spl Aring/)/Al-O (8-15 /spl Aring/)/Co/sub 70/Fe/sub 30/ (40 /spl Aring/)/Ni-Fe (100 /spl Aring/)/Ta (50 /spl Aring/). Local current-voltage (I-V) characteristic curves were obtained for different contrast levels in the electrical current distribution images on the test sample. With the purpose of obtaining quantitative values for the barrier characteristics, data was analyzed by the Simmons' equation from -1.0 to 1.0 V. The magnetoresistance ratio values were estimated to be 35.02%, with a bias voltage of 0.36 V, when applying a magnetic field of /spl plusmn/200 Oe. In addition, a study on the ramping effect on the dielectric tunneling capacitance and analytical resistance-capacitance (RC) model were carried out.
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2004.842080