Dilute Al-Mn alloys for low-temperature device applications

We discuss results on the superconducting, electron-transport, and tunneling properties of Al doped with Mn in the range of 1000 to 3000 ppm. We demonstrate that the critical temperature of Al can be systematically reduced to below 50 mK. Films are prepared by sputter deposition, and show values of...

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Bibliographic Details
Published in:Journal of low temperature physics 2004-02, Vol.134 (3-4), p.973-984
Main Authors: RUGGIERO, S. T, WILLIAMS, A, RIPPARD, W. H, CLARK, A, DEIKER, S. W, VALE, L. R, ULLOM, J. N
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Low tc films
Physics
Superconducting films and low-dimensional structures
Superconductivity
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Summary:We discuss results on the superconducting, electron-transport, and tunneling properties of Al doped with Mn in the range of 1000 to 3000 ppm. We demonstrate that the critical temperature of Al can be systematically reduced to below 50 mK. Films are prepared by sputter deposition, and show values of d(ln R)/d(In T) of ~500, indicating sharp superconducting transitions. Al-Mn/I/Al-Mn tunnel junctions show low sub-gap conductance and BCS like characteristics. Our results in general suggest that the material is of interest for transition-edge sensors operating in the 100 mK regime and superconductor/insulator/superconductor (S/I/S) and normal/ insulator/ superconductor (N/I/S) devices, in the latter case where heavily doped Al-Mn can replace the normal metal.
ISSN:0022-2291
1573-7357
DOI:10.1023/B:JOLT.0000013212.61515.56