Fabrication of waveguides in sputtered films of GeAsSe glass via photodarkening with above bandgap light

We have fabricated and characterized waveguides in thin films of Ge 5As 34Se 61 glass sputtered onto silicon wafer substrates. The 5-μm width waveguides were fabricated by exposure to 514.5 nm light from an Ar 3+ laser, with a lithographic exposure mask used to provide the lateral patterning for the...

Full description

Saved in:
Bibliographic Details
Published in:Materials letters 2004, Vol.58 (1), p.51-54
Main Authors: Turnbull, D.A., Sanghera, J.S., Nguyen, V.Q., Aggarwal, I.D.
Format: Article
Language:English
Subjects:
Glasses
Optical materials and properties
Thin films
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We have fabricated and characterized waveguides in thin films of Ge 5As 34Se 61 glass sputtered onto silicon wafer substrates. The 5-μm width waveguides were fabricated by exposure to 514.5 nm light from an Ar 3+ laser, with a lithographic exposure mask used to provide the lateral patterning for the waveguides. The measured losses of the waveguides ranged from 3.5 to 6.4 dB/cm. From SEM imaging, we concluded that scattering from microcracks at the glass–substrate interface was the dominant source of loss.
ISSN:0167-577X
1873-4979
DOI:10.1016/S0167-577X(03)00413-0