Body-contacted SOI MOSFET structure with fully bulk CMOS compatible layout and process

A new SOI MOSFET structure to reduce the floating body effect is proposed and successfully demonstrated. The key idea of the proposed structure is that the field oxide does not consume the silicon film completely, so that the well contact can suppress the body potential increase in SOI MOSFET throug...

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Bibliographic Details
Published in:IEEE electron device letters 1997-03, Vol.18 (3), p.102-104
Main Authors: Koh, Yo-Hwan, Choi, Jin-Hyeok, Nam, Myung-Hee, Yang, Ji-Woon
Format: Article
Language:English
Subjects:
CMOS process
Electrical resistance measurement
Fabrication
Immune system
Length measurement
MOSFET circuits
Propagation delay
Semiconductor films
Silicon
Threshold voltage
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Summary:A new SOI MOSFET structure to reduce the floating body effect is proposed and successfully demonstrated. The key idea of the proposed structure is that the field oxide does not consume the silicon film completely, so that the well contact can suppress the body potential increase in SOI MOSFET through the remaining silicon film between the field oxide and buried oxide. The measured results show the suppressed floating body effect as expected. This new structure retains most of the advantages in the propagation delay of the conventional SOI MOSFET without body potential instability. An additional advantage of the proposed structure is that the layout and process are the same as those of bulk CMOS.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.556094