1.5 nm direct-tunneling gate oxide Si MOSFET's

In this paper, normal operation of a MOSFET with an ultra-thin direct-tunneling gate oxide is reported for the first time. These high current drive n-MOSFET's were fabricated with a 1.5 nm direct-tunneling gate oxide. They operate well at gate lengths of around 0.1 /spl mu/m, because the gate l...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1996-08, Vol.43 (8), p.1233-1242
Main Authors: Sasaki, H., Ono, M., Yoshitomi, T., Ohguro, T., Nakamura, S., Saito, M., Iwai, H.
Format: Article
Language:English
Subjects:
Hot carriers
Impurities
Insulation
Integrated circuit technology
Leakage current
MOSFET circuits
Semiconductor devices
Temperature
Transconductance
Tunneling
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Summary:In this paper, normal operation of a MOSFET with an ultra-thin direct-tunneling gate oxide is reported for the first time. These high current drive n-MOSFET's were fabricated with a 1.5 nm direct-tunneling gate oxide. They operate well at gate lengths of around 0.1 /spl mu/m, because the gate leakage current falls in proportional to the gate length, while the drain current increases in inverse proportion. A current drive of more than 1.0 mA//spl mu/m and a transconductance of more than 1,000 mS/mm were obtained at a gate length of 0.09 /spl mu/m at room temperature. These are the highest values ever obtained with Si MOSFET's at room temperature. Further, hot-carrier reliability is shown to improve as the thickness of the gate oxide is reduced, even in the 1.5 nm case. This work clarifies that excellent performance-a transconductance of over 1,000 mS/mm at room temperature-can be obtained with Si MOSFET's if a high-capacitance gate insulator is used.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.506774