Modulation of edge defects on dual-spin filtering in zigzag β-SiC7 nanoribbons

• Published in: The Journal of chemical physics 2023-05, Vol.158 (20)
• Main Authors: He, Jing-Jing, Guo, Fang-Wen, Ni, Hui-Min, Dong, Jia-Bei, Cui, Wen-Dou, Lu, Tian-Yi, Yuan, Jia-Ren, Guo, Yan-Dong, Yan, Xiao-Hong
• Format: Article
• Language: English
• Subjects: Channels; Controllability; Defects; Eigenvectors; Electron spin; Electron transport; Electronic devices; Filtration; First principles; Nanoribbons; Physics; Spintronics; Transport properties
• ISSN: 0021-9606; 1089-7690
• DOI: 10.1063/5.0141343

The unique edge states of the zigzag β-SiC7 nanoribbons aroused our attention, and therefore, based on first-principles calculations, we investigated their spin-dependent electronic transport properties by constructing controllable defects to modulate these special edge states. Interestingly, by introducing rectangular edge defects in the SiSi and SiC edge-terminated systems, not only the spin-unpolarized is successfully converted to completely spin-polarized, but also the direction of polarization can be switched, thus enabling a dual spin filter. The analyses further reveal that the two transmission channels with opposite spins are spatially separated and that the transmission eigenstates are highly concentrated at the relative edges. The specific edge defect introduced only suppresses the transmission channel at the same edge but reserves the transmission channel at the other edge. In addition, for the CSi and CC edge-terminated systems, an additional spin-down band exists due to spin splitting in the spin-up band at EF, so that besides the original spatially separated two spin-opposite channels, an extra spin channel is distributed at the upper edge, resulting in unidirectional fully spin-polarized transport. The peculiar spatially separated edge states and excellent spin filtering properties could open up further possibilities for β-SiC7-based electronic devices in spintronics applications.