Observation of single interface traps in submicron MOSFET's by charge pumping

The observation of single interface traps in small area MOSFET's by charge pumping is demonstrated for the first time, The dependence of the single trap charge pumping current on the base level voltage is described, Also the creation of one single interface trap under influence of low level hot...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1996-06, Vol.43 (6), p.940-945
Main Authors: Groeseneken, G.V., De Wolf, I., Bellens, R., Maes, H.E.
Format: Article
Language:English
Subjects:
Charge pumps
Electron traps
Frequency
Geometry
Hot carrier injection
Ionizing radiation
MOSFET circuits
Temperature
Transistors
Voltage
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Summary:The observation of single interface traps in small area MOSFET's by charge pumping is demonstrated for the first time, The dependence of the single trap charge pumping current on the base level voltage is described, Also the creation of one single interface trap under influence of low level hot carrier injection is demonstrated. A prediction of the charge pumping current behavior as a function of rise and fall time and temperature for the case of individual traps is made. The correlation with RTS-noise experiments is discussed.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.502127