Body effect in tri- and pi-gate SOI MOSFETs

A simple model based on the representation of capacitive coupling effects between the front- and back-gate and the channels, has been developed for tri-gate and pi-gate SOI MOSFETs. The model has been validated using numerical simulation of the body factor in such devices, as well as by experimental...

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Bibliographic Details
Published in:IEEE electron device letters 2004-12, Vol.25 (12), p.813-815
Main Authors: Frei, J., Johns, C., Vazquez, A., Weize Xiong, Cleavelin, C.R., Schulz, T., Chaudhary, N., Gebara, G., Zaman, J.R., Gostkowski, M., Matthews, K., Colinge, J.-P.
Format: Article
Language:English
Subjects:
Applied sciences
Capacitance
Capacitors
Channels
Compound structure devices
Devices
Dielectric, amorphous and glass solid devices
Electronics
Electrostatic fields
Electrostatics
Equivalent circuits
Exact sciences and technology
FETs
Gates
Insulated gate FETs
Joining
Mathematical models
MOS devices
MOSFETs
Numerical simulation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Shields
Silicon on insulator technology
silicon-on-insulator (SOI) technology
Threshold voltage
Transistors
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Summary:A simple model based on the representation of capacitive coupling effects between the front- and back-gate and the channels, has been developed for tri-gate and pi-gate SOI MOSFETs. The model has been validated using numerical simulation of the body factor in such devices, as well as by experimental results. The body factor is much smaller than in regular, single-gate silicon-on-insulator devices because of the enhanced coupling between gate and channel and because the lateral gates shield the device from the electrostatic field from the back gate.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2004.839223