IIB-4 analysis of the channel inversion layer capacitance in the very thin-gate IGFET

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Bibliographic Details
Published in:IEEE transactions on electron devices 1983-11, Vol.30 (11), p.1572-1573
Main Authors: Soo-Young Oh, Suk-Gi Choi, Sodini, C.G., Moll, J.L.
Format: Article
Language:English
Online Access:Get full text
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ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1983.21352