Observation and characterization of near-interface oxide traps with C-V techniques

The anomalous hump observed in low frequency C-V curves of stressed devices is attributed to near-interface oxide traps, rather than so-called "interface" traps. A low frequency C-V model has been developed to interpret the effect of near-interface oxide traps which communicate with the Si...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1995-11, Vol.42 (11), p.2004-2009
Main Authors: Cohen, N.L., Paulsen, R.E., White, M.H.
Format: Article
Language:English
Subjects:
Capacitance-voltage characteristics
Charge pumps
Dielectric devices
Electron traps
Frequency measurement
Hot carrier injection
Radiative recombination
Solid state circuits
Time measurement
Tunneling
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Summary:The anomalous hump observed in low frequency C-V curves of stressed devices is attributed to near-interface oxide traps, rather than so-called "interface" traps. A low frequency C-V model has been developed to interpret the effect of near-interface oxide traps which communicate with the Si-SiO/sub 2/ interface traps and influence C-V characteristics. At low measurement frequencies, electrons have sufficient time to tunnel from interface traps and fill near-interface oxide traps via a trap-to-trap tunneling mechanism. By varying the measurement frequency, a spatial distribution of near-interface oxide traps is obtained. A consistent near-interface oxide trap distribution has been extracted for a trap-rich SONGS memory transistor using both variable frequency Hi-Lo C-V and charge pumping techniques.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.469410