Effects of process and gate doping species on negative-bias-temperature instability of p-channel MOSFETs

The effects of poly-Si gate doping type and species as well as thermal treatments on negative-bias-temperature instability (NBTI) of p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) were investigated. We found that devices with n+-poly-Si gate depict a smaller threshold voltage...

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Bibliographic Details
Published in:Journal of the Electrochemical Society 2004-02, Vol.151 (2), p.G144-G148
Main Authors: LEE, Da-Yuan, HUANG, Tiao-Yuan, LIN, Horng-Chih, CHIANG, Wan-Ju, HUANG, Guo-Wei, TAHUI WANG
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:The effects of poly-Si gate doping type and species as well as thermal treatments on negative-bias-temperature instability (NBTI) of p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) were investigated. We found that devices with n+-poly-Si gate depict a smaller threshold voltage shift after bias-temperature stressing, compared to their p+-poly-Si-gated counterparts. By carefully controlling the thermal budget to suppress boron penetration, NBTI can be reduced by fluorine incorporation in p--poly-Si-gated devices. Finally, NBTI is found to be aggravated in devices subjected to Hz postmetalannealing, highlighting the important role of hydrogen bonds.
ISSN:0013-4651
1945-7111
DOI:10.1149/1.1639168