1-mW CW-RT monolithic VCSEL at 1.55 mum

In this letter, we demonstrate the first result of a high-power (1 mW) continuous-wave room-temperature vertical-cavity surface-emitting laser emitting at 1.55 mum using a single InP substrate. The whole structure was grown monolithically using gas source molecular beam epitaxy and incorporates two...

Full description

Saved in:
Bibliographic Details
Published in:IEEE photonics technology letters 1999-06, Vol.11 (6), p.629-631
Main Authors: Boucart, J, Starck, C, Gaborit, F, Plais, A, Bouche, N, Derouin, E, Goldstein, L, tin, C, Carpentier, D, Salet, P, Brillouet, F, Jacquet, J
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this letter, we demonstrate the first result of a high-power (1 mW) continuous-wave room-temperature vertical-cavity surface-emitting laser emitting at 1.55 mum using a single InP substrate. The whole structure was grown monolithically using gas source molecular beam epitaxy and incorporates two original approaches. The first originality consists in the growth of a metamorphic GaAs-AlAs Bragg mirror directly on an InP-based cavity. The second novel idea is to use a tunnel junction for current injection. Moreover by using these two approaches the processing is very simple and, therefore, fulfills the goal for low-cost laser production in access and interconnections applications
ISSN:1041-1135
DOI:10.1109/68.766766