High carrier density CeO2 dielectrics: implications for MOS devices

Nanocrystalline CeO2 films 75 nm thick were deposited on n-type (100) Si substrates using pulsed laser deposition to form a gate dielectric in the Pt/Si/CeO2/Pt MOS capacitor. XRD and AFM were used to characterise the film crystal structure and grain size. Electrical properties of the MOS structure...

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Bibliographic Details
Published in:Journal of the European Ceramic Society 2004, Vol.24 (6), p.1459-1462
Main Authors: LAPPAIAINEN, Jyrki, KEK, Darja, TULLER, Harry L
Format: Article
Language:English
Subjects:
Applied sciences
Cross-disciplinary physics: materials science
rheology
Electronics
Exact sciences and technology
Field effect devices
Laser deposition
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:Nanocrystalline CeO2 films 75 nm thick were deposited on n-type (100) Si substrates using pulsed laser deposition to form a gate dielectric in the Pt/Si/CeO2/Pt MOS capacitor. XRD and AFM were used to characterise the film crystal structure and grain size. Electrical properties of the MOS structure were examined by C-V and impedance spectroscopy measurements. Based on the impedance measurements and reported electron mobilities, a rather high carrier density of the order of 6 x 10 exp(17)/cm3 was derived. Their overall high resistance enables the films to be used as dielectrics. In contrast to conventional MOS capacitors, an additional capacitive contribution under accumulation was found which was attributed to the electron depletion in the CeO2 film. A model consistent with these results is presented. 13 refs.
ISSN:0955-2219
1873-619X
DOI:10.1016/s0955-2219(03)00578-8