Observation of H+ motion during interface trap formation

The time dependence of changes in the oxide trapped charge during interface trap formation is investigated. Changes in MOSFET threshold voltage Vth and number of interface traps Nit are measured in the same sample as a function of time following pulsed irradiation. When the gate bias during irradiat...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 1990-12, Vol.37 (6), p.1624-1631
Main Authors: Saks, N S, Brown, D B
Format: Article
Language:English
Online Access:Get full text
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Summary:The time dependence of changes in the oxide trapped charge during interface trap formation is investigated. Changes in MOSFET threshold voltage Vth and number of interface traps Nit are measured in the same sample as a function of time following pulsed irradiation. When the gate bias during irradiation VgI is positive, the initial /Delta Vth/ is large due to trapping of radiation-induced holes at the Si-SiO2 interface, and the postirradiation time dependence of Delta Vth is dominated by hole detrapping, as expected. When VgI is negative, interfacial hole trapping is minimized. In this case, an unusual peak in the Delta Vth vs. time curve provides evidence of the involvement of H+ ions in the Nit formation process. (I.E.)
ISSN:0018-9499
DOI:10.1109/23.101170