High-Performance n- and p-Type Single-Crystal Organic Transistors with Free-Space Gate Dielectrics

A novel single‐crystal organic field‐effect transistor (OFET) is described, in which the gate dielectric is replaced by a thin gap that can be occupied by a gas or vacuum. When used in combination with high‐quality rubrene or tetracyanoquinodimethane (TCNQ) crystals, n‐ and p‐devices with extremely...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2004-12, Vol.16 (23-24), p.2097-2101
Main Authors: Menard, E., Podzorov, V., Hur, S.-H., Gaur, A., Gershenson, M. E., Rogers, J. A.
Format: Article
Language:English
Subjects:
Field-effect transistors
Field‐effect transistors, organic
organic
Single crystals
Tetracyanoquinodimethane (TCNQ)
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Summary:A novel single‐crystal organic field‐effect transistor (OFET) is described, in which the gate dielectric is replaced by a thin gap that can be occupied by a gas or vacuum. When used in combination with high‐quality rubrene or tetracyanoquinodimethane (TCNQ) crystals, n‐ and p‐devices with extremely good mobilities and normalized sub‐threshold slopes, representing the ultimate in OFET performance, are realized.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200401017