HOLE-MEDIATED FERROMAGNETIC PROPERTIES IN Zn1-xMnxO THIN FILMS

Authors report on the room-temperature hole-mediated ferromagnetism in Zn1-xMnxO thin films. Zn1-xMnxO (x = 0.03 and 0.20) films were prepared on GaAs (001) substrates by the rf magnetron cosputtering method. At the substrate temperature high enough to activate As diffusion from GaAs substrates, p-t...

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Published in:Jpn.J.Appl.Phys ,Part 2. Vol. 43, no. 2B, pp. L280-L283. 2004 Part 2. Vol. 43, no. 2B, pp. L280-L283. 2004, 2004-01, Vol.43 (2B), p.L280-L283
Main Authors: Lim, S-W, Jeong, M-C, Ham, M-H, Myoung, J-M
Format: Article
Language:English
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Summary:Authors report on the room-temperature hole-mediated ferromagnetism in Zn1-xMnxO thin films. Zn1-xMnxO (x = 0.03 and 0.20) films were prepared on GaAs (001) substrates by the rf magnetron cosputtering method. At the substrate temperature high enough to activate As diffusion from GaAs substrates, p-type Zn1-xMnxO films were synthesized. The SQUID and alternating gradient magnetometer results showed ferromagnetic characteristics at room temperature. 20 refs.
ISSN:0021-4922
DOI:10.1143/JJAP.43.L280