Gamma-radiation effect on donor and acceptor states in CdTe and CdTe:Cl

The evolution of photoluminescence (PL) spectra with increasing *g-irradiation dose was monitored for undoped and Cl-doped CdTe crystals. The emission intensities and the Huang-Rhys factors for different PL lines were determined as a function of the exposure dose. In irradiated CdTe:Cl, an irradiati...

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Bibliographic Details
Published in:Journal of alloys and compounds 2004-05, Vol.371 (1-2), p.142-145
Main Authors: Krylyuk, S G, Korbutyak, D V, Kryuchenko, Y V, Kupchak, I M, Vakhnyak, N D
Format: Article
Language:English
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Summary:The evolution of photoluminescence (PL) spectra with increasing *g-irradiation dose was monitored for undoped and Cl-doped CdTe crystals. The emission intensities and the Huang-Rhys factors for different PL lines were determined as a function of the exposure dose. In irradiated CdTe:Cl, an irradiation-induced enhancement of the electron-phonon coupling for the A-center PL was attributed to decreasing concentration of the donor-acceptor pairs responsible for this band. Gamma-irradiation of undoped CdTe at a dose larger than 10 kGy resulted in quenching of the A-center PL at 1.4 eV. the donor-acceptor line in the edge luminescence at 1.55 eV, as well as emission of the donor-bound excitons. Observed peculiarities are explained by a decrease of concentration of isolated donors, presumably through the creation of complexes with intrinsic defects generated by *g-rays.
ISSN:0925-8388
DOI:10.1016/j.iallcom.2003.06.015