A comprehensive CMOS APS crosstalk study: photoresponse model, technology, and design trends

In this paper the lateral photoresponse and crosstalk (CTK) in complementary metal-oxide-semiconductor (CMOS) photodiodes is investigated by means of a unique sub-micron scanning system (S-cube system) and numerical device simulation. An improved semi-analytical model developed for photoresponse est...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2004-12, Vol.51 (12), p.2033-2041
Main Authors: Shcherback, I., Danov, T., Yadid-Pecht, O.
Format: Article
Language:English
Subjects:
Active pixel sensor (APS)
Applied sciences
CMOS image sensor
crosstalk
Design. Technologies. Operation analysis. Testing
diffusion process
Electronics
Exact sciences and technology
General equipment and techniques
Imaging devices
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Integrated circuits
modeling
Optical crosstalk
Optoelectronic devices
parameter estimation
Photodiodes
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Sensors (chemical, optical, electrical, movement, gas, etc.)
remote sensing
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Summary:In this paper the lateral photoresponse and crosstalk (CTK) in complementary metal-oxide-semiconductor (CMOS) photodiodes is investigated by means of a unique sub-micron scanning system (S-cube system) and numerical device simulation. An improved semi-analytical model developed for photoresponse estimation of a photodiode-based CMOS active pixel sensor reveals the photosignal and the CTK dependence on the pixels geometrical shape and arrangement within the array. The trends that promise to increase CMOS image sensor performance are presented and design tradeoffs intended to optimize the photoresponse and minimize CTK are discussed.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2004.839742