Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs

GaN epitaxial layers and InGaN/GaN multiquantum well blue light emitting diodes (LEDs) were prepared on both patterned sapphire substrates (PSS) and conventional sapphire substrates. From scanning electron microscopy micrographs of GaN epitaxial layers on PSS, it was found that lateral growth indeed...

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Bibliographic Details
Published in:Journal of crystal growth 2004-02, Vol.261 (4), p.466-470
Main Authors: Hsu, Y.P, Chang, S.J, Su, Y.K, Sheu, J.K, Lee, C.T, Wen, T.C, Wu, L.W, Kuo, C.H, Chang, C.S, Shei, S.C
Format: Article
Language:English
Subjects:
A1. Dislocation
A2. Lateral growth
A3. Multi quantum wells
Applied sciences
B1. InGaN/GaN
B1. Pattern sapphire
B3. Light emitting diodes
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Electronics
Exact sciences and technology
Light-emitting devices
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Optoelectronic devices
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:GaN epitaxial layers and InGaN/GaN multiquantum well blue light emitting diodes (LEDs) were prepared on both patterned sapphire substrates (PSS) and conventional sapphire substrates. From scanning electron microscopy micrographs of GaN epitaxial layers on PSS, it was found that lateral growth indeed occurred and the lateral to vertical growth rate ratio was around 2. It was also found that we could enhance the LED output power by using lateral epitaxial patterned sapphire. Such an enhancement could be attributed to the reduced dislocation density in the lateral growth regions of the epitaxial layers.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2003.09.046