Electrical characteristics of a 6H-SiC epitaxial layer grown by chemical vapor deposition on porous SiC substrate

Porous SiC (PSC) has been proposed as a buffer layer for reducing defects in epitaxial SiC layers. In this study, electrical characteristics of a 6H-SiC epitaxial layer grown by chemical vapor deposition on a porous SiC substrate (SiC-on-PSC) have been compared to those simultaneously grown on a sta...

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Bibliographic Details
Published in:Journal of electronic materials 2004-05, Vol.33 (5), p.456-459
Main Authors: FANG, Z.-Q, LOOK, D. C, CHANDRASEKARAN, R, RAO, S, SADDOW, S. E
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Crystal defects
Diodes
Electrical properties of specific thin films
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electrons
Exact sciences and technology
Heat conductivity
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Other inorganic semiconductors
Physics
Silicon carbide
Substrates
Temperature
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Summary:Porous SiC (PSC) has been proposed as a buffer layer for reducing defects in epitaxial SiC layers. In this study, electrical characteristics of a 6H-SiC epitaxial layer grown by chemical vapor deposition on a porous SiC substrate (SiC-on-PSC) have been compared to those simultaneously grown on a standard SiC substrate (SiC-on-STD). Schottky barrier diodes (SBDs) have been fabricated on both epitaxial layers and then investigated with temperature-dependent current-voltage (I-V), capacitance-voltage (C-V), and deep-level transient spectroscopy (DLTS) measurements. The SBDs on both SiC-on-PSC and SiC-on-STD show about the same I-V and C-V characteristics, and at least four electron traps, i.e., B (0.75 eV), C (0.63 eV), D (0.40 eV), and E (0.16 eV), can be identically found in both SBDs by DLTS measurements. Thus, we conclude that the electrical quality of SiC-on-PSC is comparable to that of SiC-on-STD, and that the higher breakdown voltages observed in SBDs on SiC-on-PSC are not obviously related to a different defect structure. [PUBLICATION ABSTRACT] Key words: Epitaxial 6H-SiC, porous SiC, electrical characterizations, electron traps
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-004-0202-y