IMPROVEMENT IN STRUCTURAL AND ELECTRICAL PROPERTIES OF (Ba0.5Sr0.5)TiO3 CAPACITORS USING (Ba0.5Sr0.5)RuO3 CONDUCTIVE LAYERS AT (Ba0.5Sr0.5)TiO3/Pt INTERFACE

BST thin films and BSR interlayers were deposited by PLD and liquid-delivery metalorganic chemical vapor deposition (LDMOCVD) onto Pt/TiO2/Si substrates, respectively. Ultrathin BSR conductive layers were inserted at the BST/Pt interface to improve the dielectric properties of BST thin films. BST fi...

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Published in:Jpn.J.Appl.Phys ,Part 1. Vol. 43, no. 4A, pp. 1442-1445. 2004 Part 1. Vol. 43, no. 4A, pp. 1442-1445. 2004, 2004, Vol.43 (4A), p.1442-1445
Main Authors: Oh, Y-N, Yoon, S-G
Format: Article
Language:English
Online Access:Get full text
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Summary:BST thin films and BSR interlayers were deposited by PLD and liquid-delivery metalorganic chemical vapor deposition (LDMOCVD) onto Pt/TiO2/Si substrates, respectively. Ultrathin BSR conductive layers were inserted at the BST/Pt interface to improve the dielectric properties of BST thin films. BST films deposited on ultrathin BSR interlayers showed an improvement in roughness and microstructure compared with those without BSR layers in an overall range of BST film thickness. The temperature-independent interface capacities in BST/Pt and BST/BSR/Pt structures are approximately 8.9 and 20 mu F/cm2, respectively. The dielectric properties of BST films were improved by the increase in interface capacity as well as roughness and microstructure using the BSR conductive layer which is similar to BST in crystal structure and chemical composition. 9 refs.
ISSN:0021-4922
DOI:10.1143/JJAP.43.1442