Electrochemical surface transfer doping: The mechanism behind the surface conductivity of hydrogen-terminated diamond

Intrinsic diamond with a bandgap of 5.4 eV exhibits a surface conductivity (SC) of the order of 10-5 Omega-1 when terminated by hydrogen. This conductivity is carried by a hole-accumulation layer close to the surface with an areal carrier concentration of about 1013 cm-2, and it has already been uti...

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Bibliographic Details
Published in:Journal of the Electrochemical Society 2004, Vol.151 (10), p.E315-E321
Main Authors: RISTEIN, Jürgen, RIEDEL, Marc, LEY, Lothar
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Surface conductivity and carrier phenomena
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Summary:Intrinsic diamond with a bandgap of 5.4 eV exhibits a surface conductivity (SC) of the order of 10-5 Omega-1 when terminated by hydrogen. This conductivity is carried by a hole-accumulation layer close to the surface with an areal carrier concentration of about 1013 cm-2, and it has already been utilized for a unique kind of field effect transistor. Although the microscopic doping mechanism is still under debate. Based on the results of a variety of surface-sensitive experiments we propose a new surface-transfer doping mechanism by which electron transfer from the valence band to adsorbed, hydrated ionic species at the surface creates the holes for the surface conductivity. In order to draw a complete picture of the surface conductivity concepts from surface and semiconductor physics as well as electrochemistry have to be adopted.
ISSN:0013-4651
1945-7111
DOI:10.1149/1.1785797