A dual-wavelength source with monolithically integrated electroabsorption modulators and Y-junction coupler by selective-area MOCVD

Three-step selective-area metal-organic chemical vapor deposition (MOCVD) is used to fabricate a dual wavelength InGaAs-GaAs-AlGaAs quantum well laser source with integrated electroabsorption modulators and a passive Y-junction coupler. Threshold current values of 9.5 and 10.1 mA are obtained for tw...

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Bibliographic Details
Published in:IEEE photonics technology letters 1997-02, Vol.9 (2), p.158-160
Main Authors: Osowski, M.L., Lammert, R.M., Coleman, J.J.
Format: Article
Language:English
Subjects:
Laser tuning
MOCVD
Optical coupling
Optical crosstalk
Optical device fabrication
Optical pumping
Optical sensors
Optical waveguides
Waveguide lasers
Wavelength division multiplexing
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Summary:Three-step selective-area metal-organic chemical vapor deposition (MOCVD) is used to fabricate a dual wavelength InGaAs-GaAs-AlGaAs quantum well laser source with integrated electroabsorption modulators and a passive Y-junction coupler. Threshold current values of 9.5 and 10.1 mA are obtained for two distinct wavelength sources operating continuous-wave (CW) coupled into the same output waveguide.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.553073