Diagnostics of asymmetrically coated semiconductor lasers

The authors present a simple diagnostic procedure for lasers that have a priori unknown facet reflectivities. The most important laser parameters that can be extracted are the cavity decay rate Gamma /sub c/ (equal to the inverse of the photon lifetime), the mirror loss coefficient alpha /sub m/ ide...

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Bibliographic Details
Published in:IEEE photonics technology letters 1991-07, Vol.3 (7), p.600-602
Main Authors: Hamel, W.A., Babeliowsky, M., Woerdman, J.P., Acket, G.A.
Format: Article
Language:English
Subjects:
Current measurement
Laboratories
Optical arrays
Photodiodes
Power generation
Power lasers
Power measurement
Semiconductor device measurement
Semiconductor laser arrays
Semiconductor lasers
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Summary:The authors present a simple diagnostic procedure for lasers that have a priori unknown facet reflectivities. The most important laser parameters that can be extracted are the cavity decay rate Gamma /sub c/ (equal to the inverse of the photon lifetime), the mirror loss coefficient alpha /sub m/ identical to -1/2 L In R/sub 1/R/sub 2/, the internal loss coefficient alpha /sub i/, the facet reflection coefficients R/sub 1/ and R/sub 2/, the spontaneous emission factor n/sub sp/, and the differential gain xi /sub l/. The authors have verified the procedure by applying it to lasers with a priori known facet reflection coefficients, these lasers were weakly index guided (VSIS and CSP types).< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.87926