Modulated beam growth method for MBE grown GaN layers

A novel modulated beam growth method was proposed for the low temperature molecular beam epitaxy grown GaN layers. From reflection high-energy electron diffraction patterns, it was found that we could alternately achieve N-enriched surfaces and Ga-enriched surfaces during the growth. Scanning electr...

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Bibliographic Details
Published in:Journal of crystal growth 2004-03, Vol.263 (1-4), p.400-405
Main Authors: Liu, K.T., Tezuka, T., Sugita, S., Watari, Y., Horikoshi, Y., Su, Y.K., Chang, S.J.
Format: Article
Language:English
Subjects:
A1. Reflection high energy electron diffraction
A1. Scanning electron microscope
A1. X-ray diffraction
A3. Modulated beam growth
A3. RF plasma assisted molecular beam epitaxy
A3. Stoichiometric growth
B1. Ga-enrich
B1. N-enrich
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Physics
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Summary:A novel modulated beam growth method was proposed for the low temperature molecular beam epitaxy grown GaN layers. From reflection high-energy electron diffraction patterns, it was found that we could alternately achieve N-enriched surfaces and Ga-enriched surfaces during the growth. Scanning electron microscopic pictures also show that we could achieve better surface morphologies by using the modulated beam growth method. Improved X-ray diffraction characteristics were also demonstrated. These observations could all be attributed to the enhanced lateral growth of the modulated beam growth method.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2003.11.100