Mechanical properties of ion beam deposited carbon films

Carbon films have been formed by direct ion beam deposition. In all experiments crystalline n-Si 〈1 0 0〉 wafers have been used as substrates. Mechanical stress of the films was measured using laser interferometry. Chemical structure of the carbon films was investigated using Raman spectroscopy. Resi...

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Bibliographic Details
Published in:Carbon (New York) 2004, Vol.42 (5), p.1085-1088
Main Authors: Tamulevicius, S., Kopustinskas, V., Meskinis, S., Augulis, L.
Format: Article
Language:English
Subjects:
Carbon film
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Fullerenes and related materials
diamonds, graphite
Laser interferometry
Materials science
Mechanical properties
Physics
Specific materials
Stress
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Summary:Carbon films have been formed by direct ion beam deposition. In all experiments crystalline n-Si 〈1 0 0〉 wafers have been used as substrates. Mechanical stress of the films was measured using laser interferometry. Chemical structure of the carbon films was investigated using Raman spectroscopy. Residual stress increase (from 0.118 GPa to nearly 0.4 GPa) with the deposition temperature was observed. Correlation between the stress level and phase composition of thin film was revealed. It is shown that deposition at high temperature brings to the formation of the polymer-like carbon films and higher residual level stress. Nitrogen doping resulted in the formation of the more graphitic coatings and decreased stress level.
ISSN:0008-6223
1873-3891
DOI:10.1016/j.carbon.2003.12.040