ALD of Ta(Si)N thin films using TDMAS as a reducing agent and as a Si precursor

Ta(Si)N thin films were deposited by atomic layer deposition (ALD) from tantalum chloride, ammonia, and tris(dimethylamino)silane (TDMAS). TDMAS was used as a reducing agent and as a silicon precursor. The pulsing order and the length of the TDMAS pulse were optimized. The deposition temperature was...

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Bibliographic Details
Published in:Journal of the Electrochemical Society 2004, Vol.151 (8), p.G523-G527
Main Authors: ALEN, Petra, AALTONEN, Titta, RITALA, Mikko, LESKELÄ, Markku, SAJAVAARA, Timo, KEINONEN, Juhani, HOOKER, Jacob C, MAES, Jan Willem
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Vapor phase epitaxy
growth from vapor phase
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Summary:Ta(Si)N thin films were deposited by atomic layer deposition (ALD) from tantalum chloride, ammonia, and tris(dimethylamino)silane (TDMAS). TDMAS was used as a reducing agent and as a silicon precursor. The pulsing order and the length of the TDMAS pulse were optimized. The deposition temperature was varied between 300 and 500DGC. The film properties were analyzed by time-of-flight elastic recoil detection analysis, energy dispersive X-ray spectroscopy, X-ray diffraction, and the standard four-point probe method. Additionally work function values were measured by depositing 50 nm thick Ta(Si)N films on different thicknesses of hafnium oxide layers on silicon. [Applications: CMOS devices].
ISSN:0013-4651
1945-7111
DOI:10.1149/1.1768547