Nickel silicides in semiconductor processing: thermal budget considerations

Nickel silicide (NiSi) is emerging to be the choice material for contact application in semiconductor device processing for 65 nm technology node and beyond. However, process integration issues are yet to be completely understood and addressed. The focus of present work is to facilitate better under...

Full description

Saved in:
Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2004-12, Vol.114, p.46-50
Main Authors: Ramamurthy, Sundar, Ramachandran, Balasubramanian, Byun, Jeong Soo, Dixit, Tarpan, Hunter, Aaron, Ramanujam, Rajesh
Format: Article
Language:English
Subjects:
CMOS
Nickel silicides
Rapid thermal processing
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Nickel silicide (NiSi) is emerging to be the choice material for contact application in semiconductor device processing for 65 nm technology node and beyond. However, process integration issues are yet to be completely understood and addressed. The focus of present work is to facilitate better understanding of the influence of thermal budget on nickel silicide solid-state reaction. The reaction couple consists of single-crystal silicon wafers with nickel layers deposited on them. Requirements for low temperature anneal and improved within wafer sheet resistance uniformity pose challenges for conventional lamp-based rapid thermal processing (RTP) due to lamp response effects on temperature controllability. Extendibility of such a system is presented with emphasis on process chamber technology. Low temperature “spike” anneal is demonstrated for temperatures
ISSN:0921-5107
1873-4944
DOI:10.1016/j.mseb.2004.07.076