Influence of C incorporation on the initial growth of epitaxial NiSi2 on Si(1 0 0)

The initial growth of NiSi2 on Si(100) surfaces with a thin C layer by scanning tunneling microscopy has been investigated. The surface roughening with the formation of epitaxial NiSi2 domains is effectively suppressed even by the introduction of a submonolayer thick C layer. The reduction of an ave...

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Bibliographic Details
Published in:Applied surface science 2004-10, Vol.237 (1-4), p.150-155
Main Authors: Okada, Emi, Nakatsuka, Osamu, Oida, Satoshi, Sakai, Akira, Zaima, Shigeaki, Yasuda, Yukio
Format: Article
Language:English
Subjects:
Carbon
Epitaxial growth
Nickel
Scanning tunneling microscopy
Silicide
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Summary:The initial growth of NiSi2 on Si(100) surfaces with a thin C layer by scanning tunneling microscopy has been investigated. The surface roughening with the formation of epitaxial NiSi2 domains is effectively suppressed even by the introduction of a submonolayer thick C layer. The reduction of an average size of epitaxial NiSi2 islands and the increase in the nucleation density of NiSi2 islands are caused by incorporating of C atoms into the surface before the 4.8-monolayer thick Ni deposition. The adsorption condition of C atoms on the surface more strongly influences the density and the average size of epitaxial NiSi2 islands rather than the total amount of deposited C atoms does.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2004.06.034