Enhanced performance of pyroelectric microsensors through the introduction of nanoporosity

Sol-gel process has successfully been applied for the deposition of porous PbZr x Ti 1− x O 3 ( x=0.45, 0.15) thin films on platinized silicon wafers. Addition of a polymer as a volatile phase to the precursor sol prior to spin coating has been proved an excellent method to synthesize PZT-porous fil...

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Bibliographic Details
Published in:Journal of the European Ceramic Society 2004, Vol.24 (2), p.247-251
Main Authors: Suyal, G., Setter, N.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Electrical properties of specific thin films
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Ferroelectric properties
General equipment and techniques
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Liquid phase epitaxy
deposition from liquid phases (melts, solutions, and surface layers on liquids)
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Other inorganic semiconductors
Pb(Zr,Ti)O 3
Physics
Porosity
Sensors
Sensors (chemical, optical, electrical, movement, gas, etc.)
remote sensing
Sol-gel process
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Summary:Sol-gel process has successfully been applied for the deposition of porous PbZr x Ti 1− x O 3 ( x=0.45, 0.15) thin films on platinized silicon wafers. Addition of a polymer as a volatile phase to the precursor sol prior to spin coating has been proved an excellent method to synthesize PZT-porous films. Introduction of pores creates a matrix void composite resulting in high figures of merit for pyroelectric applications. The dielectric constant was found to be strongly dependent to the porosity, whereas the pyrocoefficient changes moderately with porosity. The relative permittivity can be decreased down to 150 and 95 for PZT films with Zr/Ti ratio of 45/55 and 15/85 respectively, and the figures of merit F v and F d values for PZT (Zr/Ti=15/85) films can be increased up to 1.95 and 139 μC/m 2 K, respectively by incorporating a nanoporous structure in films.
ISSN:0955-2219
1873-619X
DOI:10.1016/S0955-2219(03)00239-5