DC-Voltage-induced thermal shift of bias point in LiNbO(3) optical Modulators

Increasing thermal shift of a bias point is observed when dc voltage is applied to z-cut LiNbO(3) (LN) modulators having asymmetric design; whereas, stable thermal shift is observed in symmetric x-cut LN modulators. A growth of the thermal shift depends upon the amplitude, polarity, and duration of...

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Bibliographic Details
Published in:IEEE photonics technology letters 2004-11, Vol.16 (11), p.2460-2462
Main Authors: Nagata, H, O' Brien, N F, Bosenberg, W R, Reiff, G L, Voisine, K R
Format: Article
Language:English
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Summary:Increasing thermal shift of a bias point is observed when dc voltage is applied to z-cut LiNbO(3) (LN) modulators having asymmetric design; whereas, stable thermal shift is observed in symmetric x-cut LN modulators. A growth of the thermal shift depends upon the amplitude, polarity, and duration of the applied voltage and constitutes a new criterion to reliability modeling of LN modulators.
ISSN:1041-1135
DOI:10.1109/LPT.2004.834928