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Domain wall motion in RE-TM films with different thickness
A thermally activated domain wall motion is studied in amorphous TbFe films with different thicknesses. The activation energy of the domain wall displacement process is determined for the films with various composition and thicknesses. It is about 2.5 eV. The activation volume of this process nonlin...
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Published in: | IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States) 1993-11, Vol.29 (6), p.2536-2538 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | A thermally activated domain wall motion is studied in amorphous TbFe films with different thicknesses. The activation energy of the domain wall displacement process is determined for the films with various composition and thicknesses. It is about 2.5 eV. The activation volume of this process nonlinearly increases from 2*10/sup -18/ cm/sup 3/ to 7*10/sup -18/ cm/sup 3/ as the film thickness increases from 25 nm to 400 nm. The change of the domain shape with the film thickness growth and domain wall coercive force dependence on film thickness are discussed in terms of thermoactivated domain wall motion.< > |
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ISSN: | 0018-9464 1941-0069 |
DOI: | 10.1109/20.280962 |