Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI
In this paper, we propose a novel operation of a MOSFET that is suitable for ultra-low voltage (0.6 V and below) VLSI circuits. Experimental demonstration was carried out in a Silicon-On-Insulator (SOI) technology. In this device, the threshold voltage of the device is a function of its gate voltage...
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Published in: | IEEE transactions on electron devices 1997-03, Vol.44 (3), p.414-422 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | In this paper, we propose a novel operation of a MOSFET that is suitable for ultra-low voltage (0.6 V and below) VLSI circuits. Experimental demonstration was carried out in a Silicon-On-Insulator (SOI) technology. In this device, the threshold voltage of the device is a function of its gate voltage, i.e., as the gate voltage increases the threshold voltage (V/sub t/) drops resulting in a much higher current drive than standard MOSFET for low-power supply voltages. On the other hand, V/sub t/ is high at V/sub gs/=0, therefore the leakage current is low. We provide extensive experimental results and two-dimensional (2-D) device and mixed-mode simulations to analyze this device and compare its performance with a standard MOSFET. These results verify excellent inverter dc characteristics down to V/sub dd/=0.2 V, and good ring oscillator performance down to 0.3 V for Dynamic Threshold-Voltage MOSFET (DTMOS). |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/16.556151 |