Effect of oxide tunneling on the measurement of MOS interface states

In principle, capacitance-voltage (C-V) and charge pumping techniques should supply the same information on the energy distribution of interface states. On the other hand, we have found from measurements taken on the same samples that the C-V method systematically gives a lower state density in the...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2000-08, Vol.21 (8), p.405-407
Main Authors: Giannini, M., Pacelli, A., Lacaita, A.L., Perron, L.M.
Format: Article
Language:English
Subjects:
Capacitance
Charge
Charge pumps
Density
Density measurement
Devices
Doping
Electron traps
Energy distribution
Energy measurement
Extraction
Interface states
Metal oxide semiconductors
MOS capacitors
Oxides
Testing
Tunneling
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In principle, capacitance-voltage (C-V) and charge pumping techniques should supply the same information on the energy distribution of interface states. On the other hand, we have found from measurements taken on the same samples that the C-V method systematically gives a lower state density in the midgap region, with a steeper energy dependence. We show that the agreement is greatly improved by introducing in both extraction techniques the effects of carrier tunneling in slow oxide traps.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.852965