Design and fabrication of 60-Gb/s InP-based monolithic photoreceiver OEICs and modules

An InP-based photoreceiver comprising a waveguide-integrated photodiode and a traveling-wave amplifier is presented, which allows dc-coupled interfacing to subsequent electronics without a bias-T. Getting rid of the bias-T provides cost savings of the receiver operation and improves the available ba...

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Bibliographic Details
Published in:IEEE journal of selected topics in quantum electronics 2002-11, Vol.8 (6), p.1445-1450
Main Authors: Bach, H.-G., Beling, A., Mekonnen, G.G., Schlaak, W.
Format: Article
Language:English
Subjects:
Bit rate
Costs
Epitaxial growth
Epitaxial layers
Fabrication
MMICs
Optical amplifiers
Optical waveguides
Optoelectronic devices
Photodiodes
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Description
Summary:An InP-based photoreceiver comprising a waveguide-integrated photodiode and a traveling-wave amplifier is presented, which allows dc-coupled interfacing to subsequent electronics without a bias-T. Getting rid of the bias-T provides cost savings of the receiver operation and improves the available bandwidth, gain, and gain flatness. The redesigned receiver optoelectronic integrated circuit was fully packaged into a pigtailed module with a coaxial 1.85-mm connector. Its optoelectronic conversion capability for nonreturn-to-zero modulated data rates up to 66 Gb/s is shown.
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2002.806713