Effects of deposition and oxidation processes on magnetic and structural properties of iron oxide films

Osmium doped (0.75 at.%) iron oxide films were reactively sputter deposited onto Si substrates in an Ar + O 2 gas environment. The magnetic and structural properties of the as-deposited films depend critically on deposition process parameters such as O 2 flow rate, chamber pressure, substrate temper...

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Published in:IEEE transactions on magnetics 1987-09, Vol.23 (5), p.3423-3425
Main Authors: Mao-Min Chen, Ortiz, C., Lim, G., Sigsbee, R., Castillo, G.
Format: Article
Language:English
Subjects:
Argon
Iron
Magnetic films
Magnetic properties
Oxidation
Radio frequency
Saturation magnetization
Semiconductor films
Temperature dependence
X-ray diffraction
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description Osmium doped (0.75 at.%) iron oxide films were reactively sputter deposited onto Si substrates in an Ar + O 2 gas environment. The magnetic and structural properties of the as-deposited films depend critically on deposition process parameters such as O 2 flow rate, chamber pressure, substrate temperature, RF power and substrate rotation speed. The deposition process window has been determined for which only the spinel structure was observed. X-ray diffraction indicated films grown at a low O 2 flow rate of 3.0 sccm and a substrate temperature of 230°C had more random orientation and a lattice parameter closer to that of the bulk Fe 3 O 4 value. This condition produced a high saturation moment of 410 emu/cc. Increasing O 2 flow rate induced preferential
doi_str_mv 10.1109/TMAG.1987.1065549
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source IEEE Xplore (Online service)
subjects Argon
Iron
Magnetic films
Magnetic properties
Oxidation
Radio frequency
Saturation magnetization
Semiconductor films
Temperature dependence
X-ray diffraction
title Effects of deposition and oxidation processes on magnetic and structural properties of iron oxide films
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